US 12,080,612 B2
Semiconductor device having an insulating sheet and a conductive film, and method of manufacturing the same
Katsumi Taniguchi, Matsumoto (JP); Yoshinari Ikeda, Matsumoto (JP); Ryoichi Kato, Matsumoto (JP); Yuma Murata, Matsumoto (JP); and Akito Nakagome, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed by FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed on Aug. 24, 2022, as Appl. No. 17/894,645.
Claims priority of application No. 2021-171322 (JP), filed on Oct. 20, 2021.
Prior Publication US 2023/0119240 A1, Apr. 20, 2023
Int. Cl. H01L 23/047 (2006.01); H01L 21/48 (2006.01); H01L 23/373 (2006.01); H01L 25/07 (2006.01)
CPC H01L 23/047 (2013.01) [H01L 21/4807 (2013.01); H01L 21/4817 (2013.01); H01L 23/3731 (2013.01); H01L 25/072 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an insulated circuit substrate;
a power semiconductor element mounted on the insulated circuit substrate;
a first terminal having a plate-like shape having a first main surface and electrically connected to the power semiconductor element;
a second terminal having a second main surface opposed to the first main surface of the first terminal and electrically connected to the power semiconductor element;
an insulating sheet interposed between the first main surface and the second main surface;
a conductive film provided on at least one of between the insulating sheet and the first main surface and between the insulating sheet and the second main surface; and
a case to which the first terminal and the second terminal are attached, the case surrounding the insulated circuit substrate and the power semiconductor element,
wherein a laminated wiring structure configured by laminating the first terminal, the second terminal, the insulating sheet and the conductive film with each other are provided from inside to outside of the case.