US 12,080,609 B2
Method of detecting photoresist scum, method of forming semiconductor package and photoresist scum detection apparatus
Hung-Jui Kuo, Hsinchu (TW); Hui-Jung Tsai, Hsinchu (TW); and Chih Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 23, 2020, as Appl. No. 17/100,944.
Application 17/100,944 is a division of application No. 16/655,240, filed on Oct. 17, 2019, granted, now 10,847,429.
Prior Publication US 2021/0118752 A1, Apr. 22, 2021
Int. Cl. H01L 21/66 (2006.01); G01N 27/00 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01)
CPC H01L 22/12 (2013.01) [G01N 27/00 (2013.01); H01L 21/02063 (2013.01); H01L 21/02071 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/31138 (2013.01); H01L 21/02057 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of detecting a photoresist scum, comprising:
forming a photoresist layer with opening patterns on a carrier;
performing a plasma etching process to the photoresist scum in the opening patterns of the photoresist layer;
injecting first charges to the opening patterns of the photoresist layer;
after injecting the first charges, measuring and calculating a first surface potential difference of at least one of the opening patterns;
determining whether the first surface potential difference of the at least one of the opening patterns is equal to or greater than a first predetermined value,
wherein the method further comprises performing a descum process to the opening patterns of the photoresist layer when the first surface potential difference is less than the first predetermined value;
forming conductive patterns in the opening patterns of the photoresist layer:
removing the photoresist layer;
injecting second charges to the photoresist scum aside the conductive patterns; and
after injecting the second charges, detecting whether the photoresist scum is present aside at least one of the conductive patterns.