US 12,080,605 B2
Backside contacts for semiconductor devices
Aaron D. Lilak, Beaverton, OR (US); Ehren Mannebach, Beaverton, OR (US); Anh Phan, Beaverton, OR (US); Richard E. Schenker, Portland, OR (US); Stephanie A. Bojarski, Beaverton, OR (US); Willy Rachmady, Beaverton, OR (US); Patrick R. Morrow, Portland, OR (US); Jeffrey D. Bielefeld, Forest Grove, OR (US); Gilbert Dewey, Beaverton, OR (US); and Hui Jae Yoo, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by INTEL CORPORATION, Santa Clara, CA (US)
Filed on Jul. 15, 2022, as Appl. No. 17/866,122.
Application 17/866,122 is a continuation of application No. 16/355,195, filed on Mar. 15, 2019, granted, now 11,437,283.
Prior Publication US 2022/0352032 A1, Nov. 3, 2022
Int. Cl. H01L 21/8234 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823475 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 23/481 (2013.01); H01L 23/53295 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/785 (2013.01)] 24 Claims
OG exemplary drawing
 
1. An integrated circuit structure, comprising:
a vertical stack of horizontal nanowires;
a gate structure over the vertical stack of horizontal nanowires, the gate structure surrounding a channel region of each of the vertical stack of horizontal nanowires;
a first source or drain structure laterally adjacent to a first end of the vertical stack of horizontal nanowires;
a second source or drain structure laterally adjacent to a second end of the vertical stack of horizontal nanowires, the second end opposite the first end; and
a backside interconnect vertically beneath and electrically coupled to one of the first source or drain structure or the second source or drain structure, wherein the backside interconnect has a lateral width greater than a lateral width of the one of the first source or drain structure or the second source or drain structure.