US 12,080,602 B2
Semiconductor device with fin structures
Wen-Chun Keng, Hsinchu County (TW); Yu-Kuan Lin, Taipei (TW); Chang-Ta Yang, Hsinchu (TW); and Ping-Wei Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company., Ltd., Hsinchu (TW)
Filed on Jun. 8, 2023, as Appl. No. 18/331,326.
Application 16/867,754 is a division of application No. 16/047,121, filed on Jul. 27, 2018, granted, now 10,658,242, issued on May 19, 2020.
Application 18/331,326 is a continuation of application No. 17/194,910, filed on Mar. 8, 2021, granted, now 11,710,663.
Application 17/194,910 is a continuation of application No. 16/867,754, filed on May 6, 2020, granted, now 10,943,827, issued on Mar. 9, 2021.
Claims priority of provisional application 62/589,081, filed on Nov. 21, 2017.
Prior Publication US 2023/0317522 A1, Oct. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01)
CPC H01L 21/823418 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 27/0886 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 29/0847 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a substrate;
a first fin structure and a second fin structure over the substrate, wherein a top surface of the first fin structure and a top surface of the second fin structure are at different height levels;
a first semiconductor element on the first fin structure;
a second semiconductor element on the second fin structure, wherein the first semiconductor element is wider than the second semiconductor element, and the first semiconductor element is closer to the substrate than the second semiconductor element; and
an isolation feature at least partially surrounding the first fin structure and the second fin structure, wherein a top surface of the isolation feature is vertically between the top surface of the first fin structure and the top surface of the second fin structure.