	US 12,080,599 B2
	Methods for forming self-aligned contacts using spin-on silicon carbide
Junling Sun, Albany, NY (US); Lior Huli, Delmar, NY (US); Andrew Metz, Albany, NY (US); and Angelique Raley, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Oct. 4, 2022, as Appl. No. 17/959,557.
Application 17/959,557 is a continuation of application No. 17/177,379, filed on Feb. 17, 2021, granted, now 11,482,454.
Prior Publication US 2023/0044047 A1, Feb. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01)

CPC H01L 21/76897 (2013.01) [H01L 21/31051 (2013.01); H01L 21/31116 (2013.01); H01L 21/76832 (2013.01)]

20 Claims

14. A method for processing a substrate, the method comprising:

forming, over the substrate, a first feature covered with a first dielectric layer comprising a first dielectric material;

forming, over the substrate, a second feature covered with a second dielectric layer comprising a second dielectric material different from the first dielectric material;

exposing the substrate to a first etching process to selectively remove the first dielectric layer and expose the first feature;

exposing the substrate to a second etching process to selectively remove the second dielectric layer and expose the second feature; and

depositing a conductive material to form a first contact to the first feature and a second contact to the second feature.