US 12,080,594 B2
Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the same
Cheng-Lun Tsai, Hsinchu (TW); Huei-Wen Hsieh, Hsinchu (TW); Chun-Sheng Chen, Hsinchu (TW); Kai-Shiang Kuo, Hsinchu (TW); Jen-Wei Liu, Taipei (TW); Cheng-Hui Weng, Hsinchu (TW); Chun-Chieh Lin, Taichung (TW); and Hung-Wen Su, Jhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jul. 25, 2022, as Appl. No. 17/872,144.
Application 17/872,144 is a division of application No. 16/941,751, filed on Jul. 29, 2020, granted, now 11,430,692.
Prior Publication US 2022/0367262 A1, Nov. 17, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76846 (2013.01) [H01L 21/76862 (2013.01); H01L 21/76877 (2013.01); H01L 23/53238 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising a first metal interconnect structure embedded in a first dielectric material layer and overlying a substrate, wherein the first metal interconnect structure comprises:
a metallic adhesion layer comprising an alloy of copper and at least one transition metal that is not copper and located over a sidewall of the first dielectric material layer; and
a first copper fill material portion located on an inner sidewall of the metallic adhesion layer, wherein a position of a local peak atomic concentration of the at least one transition metal within the metallic adhesion layer is spaced from an outer sidewall of the metallic adhesion layer, wherein a copper atomic concentration of the metallic adhesion layer has a minimum at a location that is spaced from the outer sidewall of the metallic adhesion layer and is spaced from an interface with the copper fill material portion.