US 12,080,588 B2
Buried metal for FinFET device and method
Lei-Chun Chou, Taipei (TW); Chih-Liang Chen, Hsinchu (TW); Jiann-Tyng Tzeng, Hsinchu (TW); Chih-Ming Lai, Hsinchu (TW); Ru-Gun Liu, Zhubei (TW); and Charles Chew-Yuen Young, Cupertino, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 25, 2023, as Appl. No. 18/358,321.
Application 17/116,443 is a division of application No. 16/191,338, filed on Nov. 14, 2018, granted, now 10,867,833, issued on Dec. 15, 2020.
Application 18/358,321 is a continuation of application No. 17/869,142, filed on Jul. 20, 2022, granted, now 11,810,811.
Application 17/869,142 is a continuation of application No. 17/116,443, filed on Dec. 9, 2020, granted, now 11,424,154, issued on Aug. 23, 2022.
Claims priority of provisional application 62/592,499, filed on Nov. 30, 2017.
Prior Publication US 2023/0377941 A1, Nov. 23, 2023
Int. Cl. H01L 21/74 (2006.01); H01L 23/535 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H10B 10/00 (2023.01)
CPC H01L 21/743 (2013.01) [H01L 23/535 (2013.01); H01L 29/66795 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31111 (2013.01); H01L 21/31155 (2013.01); H01L 21/76224 (2013.01); H01L 29/785 (2013.01); H10B 10/12 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first recess in a semiconductor substrate;
depositing a conductive line within the first recess;
forming a second recess and a third recess along sidewalls of the conductive line;
forming a first fin and a second fin in the semiconductor substrate;
forming a first gate structure over the first fin and in the first recess, the first gate structure contacting a first sidewall of the conductive line;
forming a dielectric material adjacent the conductive line in the second recess; and
forming a second gate structure over the second fin and over the dielectric material.