US 12,080,582 B2
Etching apparatus and methods of cleaning thereof
Yu-Chi Lin, Hsinchu (TW); Huai-Tei Yang, Hsinchu (TW); Lun-Kuang Tan, Hsinchu (TW); Wei-Jen Lo, Hsinchu (TW); and Chih-Teng Liao, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 10, 2022, as Appl. No. 17/572,351.
Application 17/572,351 is a continuation of application No. 16/837,938, filed on Apr. 1, 2020, granted, now 11,222,805, issued on Jan. 11, 2022.
Prior Publication US 2022/0130706 A1, Apr. 28, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/68 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/683 (2006.01)
CPC H01L 21/6833 (2013.01) [H01J 37/32082 (2013.01); H01J 37/32743 (2013.01); H01L 21/3065 (2013.01); H01J 2237/0225 (2013.01); H01J 2237/182 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
placing a substrate on a surface of an electrostatic chuck in a wafer processing apparatus, the electrostatic chuck comprising a plurality of pins that protrude therefrom, wherein the wafer processing apparatus includes a process chamber and a source of radio frequency power;
applying radio frequency power from the source of radio frequency power to the substrate to create a positively charged surface on the surface of the substrate;
applying a radio frequency pulse using the source of radio frequency power to the electrostatic chuck to make debris particles and/or contaminants on and/or in proximity of the surface of the electrostatic chuck negatively charged, the debris particles and/or contaminants attaching to the substrate; and
removing the substrate from the wafer processing apparatus thereby removing the debris particles and/or contaminants from the wafer processing apparatus.