CPC H01L 21/67248 (2013.01) [G05B 15/02 (2013.01); H01L 21/324 (2013.01); H01L 21/67103 (2013.01); H01L 22/26 (2013.01)] | 19 Claims |
1. A method for controlling temperature in a thermal processing chamber, the thermal processing chamber comprising a plurality of heating elements divided into a plurality of concentric zones, each concentric zone of the plurality of concentric zones is part of a group of a plurality of groups, each group of the plurality of groups corresponding to one temperature probe, at least one group of the plurality of groups comprising a first concentric zone and a second concentric zone, the method comprising:
determining temperature sensitivity profiles of one or more of the plurality of concentric zones for a substrate based on measurements of the substrate, wherein a temperature sensitivity profile of the temperature sensitivity profiles illustrates a projected change in temperature across a diameter or a radius of a substrate based on a zone offset value, the zone offset value representing a change in power from a base line power supplied to an individual concentric zone of the plurality of concentric zones;
selecting one or more initial zone offset values for each of the one or more of the plurality of concentric zones;
simulating an adjustment of each of the one or more initial zone offset values to a respective final adjusting zone offset value that achieves a predetermined goal; and
adjusting zone offset values for each of the one or more of the plurality of concentric zones to the respective final adjusting zone offset value, such that a power distribution and a temperature distribution to the one or more of the plurality of concentric zones is changed, wherein changing the power distribution comprises delivering a different level of power to the heating elements in the first concentric zone than the heating elements in the second concentric zone.
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