US 12,080,567 B2
Systems and methods for in-situ Marangoni cleaning
Wei-Chun Hsu, Hsin-Chu (TW); Shu-Yen Wang, Hsin-Chu (TW); and Chui-Ya Peng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/874,103.
Application 17/874,103 is a division of application No. 16/547,428, filed on Aug. 21, 2019.
Claims priority of provisional application 62/724,848, filed on Aug. 30, 2018.
Prior Publication US 2022/0359237 A1, Nov. 10, 2022
Int. Cl. H01L 21/67 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/67057 (2013.01) [H01L 21/02057 (2013.01); H01L 21/67034 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A cleaning system, comprising:
a cleaning chamber;
a liquid bath region within the cleaning chamber, the liquid bath region containing a liquid in which a wafer is immersed;
a solvent layer disposed on a top surface of the liquid;
a gas region within the cleaning chamber, the gas region being disposed above the liquid bath region and containing a gas;
at least one sensor for measuring a parameter value from the gas after the wafer is removed from the liquid bath region through the solvent layer and placed within the gas region; and
at least one processor configured to:
determine that a first parameter value from the gas exceeds a first predetermined threshold value;
determine that a second parameter value from the gas exceeds a second predetermined threshold value, the second predetermined threshold value being a different type than that of the first predetermined threshold value;
perform a first remediation in response to determining that the first parameter value exceeds the first predetermined threshold value; and
perform a second remediation in response to determining that the second parameter value exceeds the second predetermined threshold value, the second remediation being a different type than that of the first remediation,
wherein the first predetermined threshold value comprises a first value representing a threshold amount of NH3 within the gas in the gas region and the first remediation comprises increasing a concentration of N2 in the gas region, and
wherein the second predetermined threshold value comprises a second value representing a threshold amount of a volatile organic compound (VOC) within the gas in the gas region and the second remediation comprises introducing a solvent that forms the solvent layer as a vapor into the gas region.