CPC H01L 21/486 (2013.01) [H01L 21/56 (2013.01); H01L 21/76898 (2013.01); H01L 23/3121 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01)] | 20 Claims |
1. A method comprising:
forming a first through via over a first metallization layer;
attaching an interconnect device to the first metallization layer adjacent to the first through via;
forming a second through via over an interconnect via of the interconnect device, wherein the second through via has a first height and a first width, the second through via having a first bottom surface and a first top surface; and
forming a third through via over the first through via, wherein the third through via has the first height and a second width, the second width being different from the first width, the third through via having a second bottom surface and a second top surface, the first bottom surface being planar with the second bottom surface and the first top surface being planar with the second top surface.
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