US 12,080,562 B2
Atomic layer etch and ion beam etch patterning
Samantha Siamhwa Tan, Newark, CA (US); Tamal Mukherjee, Fremont, CA (US); Wenbing Yang, Campbell, CA (US); Girish Dixit, San Jose, CA (US); and Yang Pan, Los Altos, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/627,054
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Sep. 9, 2020, PCT No. PCT/US2020/049871
§ 371(c)(1), (2) Date Jan. 13, 2022,
PCT Pub. No. WO2021/055197, PCT Pub. Date Mar. 25, 2021.
Claims priority of provisional application 62/901,702, filed on Sep. 17, 2019.
Prior Publication US 2022/0254649 A1, Aug. 11, 2022
Int. Cl. H01L 21/3213 (2006.01); H01J 37/305 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H10N 50/01 (2023.01)
CPC H01L 21/32136 (2013.01) [H01J 37/3053 (2013.01); H01J 37/3244 (2013.01); H01J 37/32743 (2013.01); H01J 37/32899 (2013.01); H01L 21/02057 (2013.01); H01L 21/30621 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H10N 50/01 (2023.02); H01J 37/321 (2013.01); H01J 2237/334 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for selectively etching a stack with respect to a mask, comprising:
providing an atomic layer etch to at least partially etch the stack, wherein the atomic layer etch forms at least some redeposited residue; and
providing an ion beam etch of the stack, wherein the ion beam etch removes at least some of the redeposited residue from the atomic layer etch.