CPC H01L 21/32136 (2013.01) [H01J 37/3053 (2013.01); H01J 37/3244 (2013.01); H01J 37/32743 (2013.01); H01J 37/32899 (2013.01); H01L 21/02057 (2013.01); H01L 21/30621 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H10N 50/01 (2023.02); H01J 37/321 (2013.01); H01J 2237/334 (2013.01)] | 16 Claims |
1. A method for selectively etching a stack with respect to a mask, comprising:
providing an atomic layer etch to at least partially etch the stack, wherein the atomic layer etch forms at least some redeposited residue; and
providing an ion beam etch of the stack, wherein the ion beam etch removes at least some of the redeposited residue from the atomic layer etch.
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