US 12,080,555 B2
Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
Arito Ogawa, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Jan. 27, 2021, as Appl. No. 17/159,765.
Claims priority of application No. 2020-014478 (JP), filed on Jan. 31, 2020.
Prior Publication US 2021/0242023 A1, Aug. 5, 2021
Int. Cl. H01L 21/28 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); H01L 29/49 (2006.01)
CPC H01L 21/28088 (2013.01) [C23C 16/34 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); C23C 16/4583 (2013.01); C23C 16/52 (2013.01); H01L 29/4966 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate with an oxide film formed thereon into a process chamber wherein a metal-containing film is formed on a wall or other location in the process chamber;
(b) supplying into the process chamber with at least one among: a gas containing a group 14 element and hydrogen; and a gas containing oxygen; and
(c) forming the metal-containing film on the substrate after (b),
wherein (c) comprises:
(d) supplying a metal-containing gas to the substrate; and
(e) supplying a reactive gas,
wherein (d) and (e) are alternately and repeatedly performed in (c).