	US 12,080,552 B2
	Method of depositing silicon film and film deposition apparatus
Tatsuya Miyahara, Yamanashi (JP); Yoshihiro Takezawa, Yamanashi (JP); Daisuke Suzuki, Yamanashi (JP); and Hiroyuki Hayashi, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Mar. 14, 2022, as Appl. No. 17/654,628.
Claims priority of application No. 2021-064987 (JP), filed on Apr. 6, 2021.
Prior Publication US 2022/0319845 A1, Oct. 6, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/52 (2006.01); C30B 28/02 (2006.01)

CPC H01L 21/02667 (2013.01) [C23C 16/24 (2013.01); C23C 16/52 (2013.01); C30B 28/02 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01)]

4 Claims

1. A method of depositing a silicon film, the method comprising:

supplying a silicon-containing gas on a seed layer;

depositing an amorphous silicon film on the seed layer, wherein the amorphous silicon film is deposited at a first temperature;

supplying chlorosilane gas to the amorphous silicon film;

crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film, wherein the chlorosilane cap layer is formed at a second temperature higher than the first temperature; and

annealing the chlorosilane cap layer and the amorphous silicon film at a third temperature higher than the second temperature.