CPC H01L 21/0262 (2013.01) [C30B 23/02 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/0259 (2013.01); H01L 21/02609 (2013.01); C01B 32/956 (2017.08); H01L 29/1608 (2013.01); H01L 29/161 (2013.01); H01L 29/66053 (2013.01)] | 4 Claims |
1. A SiC composite substrate comprising:
a SiC single crystal layer; and
at least one biaxially oriented SiC layer disposed on the SiC single crystal layer, wherein the at least one biaxially d SiC layer is oriented in both a c-axis direction and an a-axis direction, and wherein the at least one biaxially oriented SiC layer has pores and has a density of defect reaching the surface of the at least one biaxially oriented SiC layer of 1.0×101/cm2 or less.
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