US 12,080,549 B2
Semiconductor structure with nanofog oxide adhered to inert or weakly reactive surfaces
Iljo Kwak, San Diego, CA (US); Kasra Sardashti, Durham, NC (US); and Andrew Kummel, San Diego, CA (US)
Assigned to The Regents of the University of California, Oakland, CA (US)
Filed by The Regents of the University of California, Oakland, CA (US)
Filed on Aug. 9, 2021, as Appl. No. 17/397,640.
Application 17/397,640 is a division of application No. 15/832,212, filed on Dec. 5, 2017, granted, now 11,127,590.
Claims priority of provisional application 62/429,938, filed on Dec. 5, 2016.
Prior Publication US 2022/0319830 A1, Oct. 6, 2022
Int. Cl. H01L 21/02 (2006.01); B82Y 10/00 (2011.01); H01L 21/28 (2006.01); H01L 21/3105 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H10B 63/00 (2023.01); H10N 50/01 (2023.01); H10N 70/00 (2023.01)
CPC H01L 21/0228 (2013.01) [B82Y 10/00 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/022 (2013.01); H01L 21/28194 (2013.01); H01L 21/3105 (2013.01); H01L 29/0673 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/517 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/778 (2013.01); H01L 29/78603 (2013.01); H01L 29/78645 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H10B 63/30 (2023.02); H10N 50/01 (2023.02); H10N 70/011 (2023.02); H01L 29/0676 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising a nanofog oxide adhered to an inert 2D or 3D surface or a weakly reactive metal surface, the nanofog oxide consisting essentially of 0.5-2 nm Al2O3 nanoparticles.