US 12,080,548 B2
Selective deposition using hydrophobic precursors
Elina Färm, Helsinki (FI); Hidemi Suemori, Helsinki (FI); Raija H. Matero, Helsinki (FI); Antti Niskanen, Helsinki (FI); Suvi P. Haukka, Helsinki (FI); and Eva Tois, Espoo (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP HOLDING B.V., Almere (NL)
Filed on Jul. 8, 2021, as Appl. No. 17/370,263.
Application 17/370,263 is a continuation of application No. 15/581,726, filed on Apr. 28, 2017, granted, now 11,081,342.
Claims priority of provisional application 62/332,396, filed on May 5, 2016.
Prior Publication US 2021/0351031 A1, Nov. 11, 2021
Int. Cl. H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/32 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/40 (2013.01); C23C 16/405 (2013.01); C23C 16/45525 (2013.01); C23C 16/45553 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/32 (2013.01)] 34 Claims
OG exemplary drawing
 
1. A vapor deposition method for selectively depositing a material on a first surface of a substrate relative to a second organic surface, the method comprising:
contacting the substrate cyclically with a vapor phase hydrophobic first reactant and a vapor phase second reactant,
wherein the material is deposited selectively on the first surface relative to the second organic surface, wherein deposition on the first surface of the substrate relative to the second organic surface of the substrate is at least about 10% selective, and wherein the second organic surface comprises a polymer.