US 12,080,547 B2
Interconnect system with improved low-K dielectrics
Joung-Wei Liou, Hsinchu (TW); Yu Lun Ke, Hsinchu (TW); and Yi-Wei Chiu, Kaohsiung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 17, 2021, as Appl. No. 17/350,792.
Application 17/350,792 is a division of application No. 16/449,160, filed on Jun. 21, 2019, granted, now 11,043,373.
Claims priority of provisional application 62/712,345, filed on Jul. 31, 2018.
Prior Publication US 2021/0313174 A1, Oct. 7, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/02164 (2013.01) [H01L 21/02205 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor structure, the method comprising:
forming a conductive element within a dielectric layer over a substrate;
depositing a dielectric material over the conductive element, the depositing the dielectric material comprising:
placing the substrate into a processing chamber;
introducing a first precursor to the processing chamber, the first precursor comprising silicon atoms and oxygen atoms, the first precursor being an open-chain molecule, wherein each silicon atom is bonded to an oxygen atom, a hydrogen atom, or a methyl group; and
introducing a second precursor to the processing chamber to react and form the dielectric material, the second precursor comprising a hydrocarbon, wherein the depositing the dielectric material is performed without gaseous oxygen;
removing a portion of the dielectric material to expose the conductive element; and
forming a contact to the conductive element through the dielectric material, wherein after the forming the contact the dielectric material has a convex top surface.