US 12,080,541 B2
Device having one or more first level ion traps
Clemens Roessler, Villach (AT); Silke Katharina Auchter, Villach (AT); Johanna Elisabeth Roessler, Villach (AT); and Gerald Stocker, Goritschach (AT)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Jun. 19, 2023, as Appl. No. 18/211,480.
Application 18/211,480 is a continuation of application No. 17/488,372, filed on Sep. 29, 2021, granted, now 11,721,537.
Claims priority of application No. 20199366 (EP), filed on Sep. 30, 2020.
Prior Publication US 2023/0343576 A1, Oct. 26, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 49/42 (2006.01); H01J 49/00 (2006.01)
CPC H01J 49/424 (2013.01) [H01J 49/0018 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A device for trapping ions, the device comprising:
a first substrate provided with an upper multi-layer electrode structure implemented at a top side of the first substrate;
a second substrate disposed over the first substrate, the second substrate provided with a lower multi-layer electrode structure implemented at a bottom side of the second substrate; and
one or more first level ion traps configured to trap ions in a space between the first substrate and the second substrate, the one or more first level ion traps comprising the upper multi-layer electrode structure of the first substrate and the lower multi-layer electrode structure of the second substrate.