US 12,080,521 B2
Plasma processing method
Michiko Nakaya, Miyagi (JP); Yuya Minoura, Miyagi (JP); and Taku Gohira, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jul. 11, 2023, as Appl. No. 18/220,403.
Application 18/220,403 is a continuation of application No. 17/182,896, filed on Feb. 23, 2021, granted, now 11,749,508.
Claims priority of application No. 2020-029071 (JP), filed on Feb. 25, 2020.
Prior Publication US 2023/0360891 A1, Nov. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 2237/332 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a chamber including at least one gas inlet and at least one gas outlet;
a substrate support in the chamber;
chamber components in the chamber;
a plasma generator; and
a controller configured to perform:
(a) coating surfaces of the chamber components with a protective film by forming a first gas containing carbon and hydrogen into a first plasma in the chamber;
(b) placing a substrate on the substrate support;
(c) processing the substrate by forming a second gas into a second plasma in the chamber;
(d) removing, after (c), the protective film by forming a third gas containing oxygen into a third plasma in the chamber; and
(e) repeating (a)-(d) with respect to a plurality of substrates.