US 12,080,516 B2
High density plasma enhanced process chamber
Zheng John Ye, Santa Clara, CA (US); Jianhua Zhou, Campbell, CA (US); Shouqian Shao, Fremont, CA (US); and Suhail Anwar, Saratoga, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 23, 2021, as Appl. No. 17/456,236.
Prior Publication US 2023/0162947 A1, May 25, 2023
Int. Cl. C23C 16/34 (2006.01); C23C 16/30 (2006.01); C23C 16/40 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/32119 (2013.01) [C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/505 (2013.01); H01J 37/32532 (2013.01); H01J 2237/332 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of depositing films on a substrate, comprising:
flowing a precursor gas to a plurality of gas volumes of a showerhead, each of the gas volumes defined by a perforated tile, support members, and a faraday shield comprising a dielectric window with electrodes embedded therein, wherein the electrodes comprise a first portion and a second portion, the second portion being disposed at a non-parallel angle relative to the first portion, and wherein the first portion of each of the electrodes are disposed parallel to one another;
providing radiofrequency power to an inductive coupler disposed above the faraday shield, the inductive coupler in electrical communication with each of the gas volumes, wherein the second portion of each of the electrodes is disposed at an angle of between 10° and 170° relative to a linear portion of the inductive coupler; and
distributing plasma to a process volume of a high density plasma process chamber.