	US 12,080,506 B2
	Silicon-based vacuum transistors and integrated circuits
Saeed Mohammadi, Zionsville, IN (US); and Shabnam Ghotbi, Lafayette, IN (US)
Assigned to Purdue Research Foundation, West Lafayette, IN (US)
Filed by Purdue Research Foundation, West Lafayette, IN (US)
Filed on Sep. 5, 2023, as Appl. No. 18/242,185.
Application 18/242,185 is a continuation of application No. 17/701,298, filed on Mar. 22, 2022, granted, now 11,749,487, issued on Sep. 5, 2023.
Claims priority of provisional application 63/164,169, filed on Mar. 22, 2021.
Prior Publication US 2024/0186097 A1, Jun. 6, 2024
Int. Cl. H01J 21/20 (2006.01)

CPC H01J 21/20 (2013.01)

14 Claims

OG exemplary drawing

1. A field emitter array (FEA) vacuum transistor, comprising:

a substrate; and

a plurality of nanorods formed of a first polarity dopant on the substrate.