US 12,080,460 B2
Insulation jacket for top coil of an isolated transformer
Paul Lambkin, Carrigaline (IE); Patrick J. Murphy, Patrickswell (IE); Bernard Patrick Stenson, Manister (IE); Laurence B. O'Sullivan, Ballinacurra (IE); Stephen O'Brien, Clarina (IE); Shane Geary, Sixmilebridge (IE); Baoxing Chen, Westford, MA (US); and Sombel Diaham, Villeneuve les Bouloc (FR)
Assigned to Analog Devices Global Unlimited Company, Hamilton (BM)
Filed by Analog Devices Global Unlimited Company, Limerick (IE)
Filed on Aug. 17, 2022, as Appl. No. 17/890,163.
Application 17/890,163 is a continuation of application No. 16/553,954, filed on Aug. 28, 2019, granted, now 11,450,469.
Prior Publication US 2022/0392684 A1, Dec. 8, 2022
Int. Cl. H01F 19/08 (2006.01); H01G 2/00 (2006.01); H04B 1/04 (2006.01); H04B 1/16 (2006.01)
CPC H01F 19/08 (2013.01) [H01F 2019/085 (2013.01); H01G 2/00 (2013.01); H04B 1/04 (2013.01); H04B 1/16 (2013.01)] 20 Claims
OG exemplary drawing
 
8. A micro-isolator with enhanced breakdown voltage, comprising:
a substrate;
a first isolator element distal from the substrate;
a second isolator element proximate the substrate;
a first dielectric material, comprising a polymer, disposed between the first and second isolator elements; and
a structure encapsulating the first isolator element, the structure comprising:
a first layer of a second dielectric material, the first layer disposed on a surface of the first dielectric material;
a first adhesion layer disposed between the first layer and the first isolator element, the first adhesion layer being patterned to expose portions of the first layer not covered by the first isolator element;
a second adhesion layer covering the first isolator element and the exposed portions of the first layer; and
a second layer covering the second adhesion layer, the second layer comprising the second dielectric material or a third dielectric material different from the second dielectric material.