US 12,080,459 B2
Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction device
Jeongchun Ryu, Hwaseong-si (KR); Seungjae Lee, Suwon-si (KR); Naoki Hase, Hwaseong-si (KR); and Kwangseok Kim, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 22, 2022, as Appl. No. 17/847,099.
Claims priority of application No. 10-2021-0190394 (KR), filed on Dec. 28, 2021; and application No. 10-2022-0073057 (KR), filed on Jun. 15, 2022.
Prior Publication US 2023/0207177 A1, Jun. 29, 2023
Int. Cl. G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC H01F 10/3272 (2013.01) [G11C 11/161 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02)] 36 Claims
OG exemplary drawing
 
1. A synthetic antiferromagnet comprising:
a first ferromagnetic layer having a first surface;
a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and
a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer,
wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction that is perpendicular to the first surface and the second surface,
a first component in the first direction of the magnetization direction of the first ferromagnetic layer and a second component in the first direction of the magnetization direction of the second ferromagnetic layer are opposite to each other, and
the first ferromagnetic layer has higher electrical conductivity than electrical conductivity of the second ferromagnetic layer.