US 12,080,376 B2
Skipping pages for weak wordlines of a memory device during pre-programming
Cheng Cheng Ang, Singapore (SG); Chun Lei Kong, Singapore (SG); Ting Luo, Santa Clara, CA (US); and Aik Boon Edmund Yap, Singapore (SG)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 12, 2022, as Appl. No. 17/718,617.
Claims priority of provisional application 63/181,846, filed on Apr. 29, 2021.
Prior Publication US 2022/0351762 A1, Nov. 3, 2022
Int. Cl. G11C 7/10 (2006.01); G06F 12/02 (2006.01); G11C 8/08 (2006.01); G11C 29/12 (2006.01)
CPC G11C 7/1096 (2013.01) [G06F 12/0238 (2013.01); G11C 7/1045 (2013.01); G11C 7/1063 (2013.01); G11C 7/1069 (2013.01); G11C 8/08 (2013.01); G11C 2029/1202 (2013.01)] 34 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
one or more controllers associated with a memory device and configured to cause the apparatus to:
operate in a first mode configured to skip a first subset of pages corresponding to a first subset of wordlines of the memory device;
receive a first set of data while operating in the first mode;
store the first set of data in a second subset of pages corresponding to the first subset of wordlines based at least in part on operating in the first mode, the second subset of pages distinct from the first subset of pages;
switch, after storing the first set of data and in response to a trigger condition, from operating in the first mode to operating in a second mode configured to use each page of the first subset of pages;
receive a second set of data while operating in the second mode; and
store the second set of data in the first subset of pages based at least in part on operating in the second mode.