US 12,080,359 B2
Identify the programming mode of memory cells during reading of the memory cells
Karthik Sarpatwari, Boise, ID (US); Fabio Pellizzer, Boise, ID (US); and Nevil N. Gajera, Meridian, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Mar. 24, 2023, as Appl. No. 18/189,824.
Application 18/189,824 is a continuation of application No. 17/221,420, filed on Apr. 2, 2021, granted, now 11,615,854.
Prior Publication US 2023/0230642 A1, Jul. 20, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 7/00 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/3404 (2013.01) [G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method, comprising:
receiving a command to read a set of memory cells;
applying, in response to the command, a first read voltage to the memory cells to identify a first subset of the memory cells;
determining a programming mode of the set of memory cells; and
continuing execution of the command to determine a first data item stored, via the programming mode.