US 12,080,329 B2
Ferroelectric devices and ferroelectric memory cells
Albert Liao, Boise, ID (US); Wayne I. Kinney, Boise, ID (US); Yi Fang Lee, Boise, ID (US); and Manzar Siddik, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 12, 2022, as Appl. No. 17/812,132.
Application 17/812,132 is a continuation of application No. 16/930,242, filed on Jul. 15, 2020, granted, now 11,398,263.
Application 16/930,242 is a continuation of application No. 16/201,478, filed on Nov. 27, 2018, granted, now 10,726,899, issued on Jul. 28, 2020.
Application 16/201,478 is a continuation of application No. 15/590,863, filed on May 9, 2017, granted, now 10,319,426, issued on Jun. 11, 2019.
Prior Publication US 2022/0351768 A1, Nov. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/22 (2006.01); H01L 49/02 (2006.01); H10B 53/30 (2023.01); H10B 53/40 (2023.01)
CPC G11C 11/221 (2013.01) [G11C 11/2297 (2013.01); H01L 28/40 (2013.01); H01L 28/55 (2013.01); H10B 53/30 (2023.02); H10B 53/40 (2023.02); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A ferroelectric device, comprising:
an electrode; and
a ferroelectric material neighboring the electrode and comprising hafnium oxide, zirconium oxide, or a combination thereof, the ferroelectric material doped with at least one material selected from the group consisting of vanadium, potassium, ruthenium, selenium, and arsenic, wherein an atomic percent of the at least one material within the ferroelectric material is within a range of between about 0.1 atomic percent and about 25.0 atomic percent based on non-oxygen atoms of the ferroelectric material.