US 12,079,507 B2
Storage device and method for modifying memory cells of a storage device
Steffen Sonnekalb, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Feb. 8, 2022, as Appl. No. 17/666,762.
Claims priority of application No. 102021201580.8 (DE), filed on Feb. 18, 2021.
Prior Publication US 2022/0261176 A1, Aug. 18, 2022
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0655 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0673 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device having:
a plurality of bitwise-modifiable memory cells;
a control device configured, in order to modify an existing data content written to a group of memory cells with a data content to be written, to compare the existing data content and the data content to be written to obtain a comparison result;
wherein the control device is configured to determine a subset from the group of memory cells for modification and a remaining set, based on the comparison result, and to write the data content to be written to the subset, leaving the remaining set at least partially unchanged;
wherein, to perform the modification, the storage device is designed to read the existing data content from a memory location of the storage device and to verify the correctness of the memory location.