US 12,079,483 B2
Method for accessing flash memory module, flash memory controller, and memory device
Chia-Chi Liang, Hsinchu County (TW); Hsiao-Chang Yen, Hsinchu County (TW); and Tsu-Han Lu, Hsinchu (TW)
Assigned to Silicon Motion, Inc., Hsinchu County (TW)
Filed by Silicon Motion, Inc., Hsinchu County (TW)
Filed on Oct. 31, 2022, as Appl. No. 17/976,901.
Claims priority of application No. 111135271 (TW), filed on Sep. 19, 2022.
Prior Publication US 2024/0094915 A1, Mar. 21, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0613 (2013.01) [G06F 3/0629 (2013.01); G06F 3/0679 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for accessing a flash memory module, comprising:
selecting a block in the flash memory module;
selecting a specific encoding/decoding setting from a plurality of sets of encoding/decoding settings according to a highest erase count among all blocks in the flash memory module recorded in a block erase count data table, wherein the plurality of sets of encoding/decoding settings comprise different error correction code (ECC) lengths, respectively;
utilizing the specific encoding/decoding setting to encode a data to generate an encoded data;
writing the encoded data into the blocks;
after the encoded data is written into the block:
receiving a read command for reading a chunk from the flash memory module, wherein the chunk comprises the encoded data;
selecting the specific encoding/decoding setting from the plurality of sets of encoding/decoding settings;
utilizing the specific encoding/decoding setting to read the chunk from the flash memory module; and
decoding the chunk to generate a decoded data.