US 12,079,085 B2
Memory systems and operating methods thereof
Xianwu Luo, Hubei (CN); Jiangwei Shi, Hubei (CN); and Youxin He, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Dec. 30, 2022, as Appl. No. 18/148,865.
Application 18/148,865 is a continuation of application No. PCT/CN2022/133312, filed on Nov. 21, 2022.
Prior Publication US 2024/0168849 A1, May 23, 2024
Int. Cl. G06F 11/00 (2006.01); G06F 11/10 (2006.01); G06F 13/16 (2006.01)
CPC G06F 11/108 (2013.01) [G06F 11/1096 (2013.01); G06F 13/1673 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system, the memory system comprising:
a controller; and
a three-dimensional non-volatile memory, wherein the three-dimensional non-volatile memory includes a three-dimensional memory array, the three-dimensional memory array includes a plurality of word lines and a plurality of pages that are coupled, the controller coupled to the three-dimensional non-volatile memory, and the controller is configured to at least:
calculate received page data corresponding to a first word line in units of page data corresponding to one word line to obtain first redundant array of independent disks (RAID) parity data, and store the first RAID parity data in a parity buffer space; and
calculate received page data corresponding to an (i+1)th word line and ith RAID parity data to obtain (i+1)th RAID parity data, and store the (i+1)th RAID parity data in the parity buffer space, wherein the (i+1)th RAID parity data overwrites the ith RAID parity data, and i is a positive integer greater than or equal to 1.