US 12,078,933 B2
System and method for omnidirectional real time detection of photolithography characteristics
Tai-Yu Chen, Hsinchu (TW); Shang-Chieh Chien, Hsinchu (TW); Sheng-Kang Yu, Hsinchu (TW); Li-Jui Chen, Hsinchu (TW); and Heng-Hsin Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Oct. 14, 2021, as Appl. No. 17/501,848.
Claims priority of provisional application 63/151,216, filed on Feb. 19, 2021.
Prior Publication US 2022/0269182 A1, Aug. 25, 2022
Int. Cl. G03F 7/00 (2006.01); G06N 20/00 (2019.01)
CPC G03F 7/70033 (2013.01) [G03F 7/70025 (2013.01); G03F 7/709 (2013.01); G06N 20/00 (2019.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
performing a photolithography process by generating extreme ultraviolet light in an extreme ultraviolet light generation chamber, wherein generating extreme ultraviolet light includes generating extreme ultraviolet light by generating a plasma from droplets within the extreme ultraviolet light generation chamber;
generating sensor signals with a plurality of vibration sensors coupled to the extreme ultraviolet light generation chamber, wherein the plurality of vibration sensors are coupled to a collector mirror of the extreme ultraviolet light generation chamber;
analyzing the sensor signals; and
adjusting a parameter of extreme ultraviolet light generation based on the sensor signals.