US 12,078,921 B2
Phase-shift reticle for use in photolithography
Tse-An Yeh, Taipei (TW); Jun-Fei Zheng, Westport, CT (US); Montray Leavy, Singapore (SG); and Chun Kuang Chen, Zhubei (TW)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Filed by ENTEGRIS, INC., Billerica, MA (US)
Filed on Nov. 18, 2021, as Appl. No. 17/529,840.
Claims priority of provisional application 63/116,423, filed on Nov. 20, 2020.
Prior Publication US 2022/0163881 A1, May 26, 2022
Int. Cl. G03F 1/32 (2012.01); G03F 1/24 (2012.01); G03F 7/00 (2006.01)
CPC G03F 1/32 (2013.01) [G03F 1/24 (2013.01); G03F 7/70283 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A reticle, comprising:
a substrate;
a reflective structure disposed over the substrate;
a pattern defining layer, comprising a first material, deposited over the reflective structure, wherein the pattern defining layer comprises a pattern trench; and
a phase shifter, comprising a second material, disposed in the pattern trench, wherein a transmittance of the second material is different from a transmittance of the first material, and wherein a ratio of the transmittance of the first material to a transmittance of the second material is in a range of about 0.62 to about 0.98.