US 12,078,799 B2
Hermetically sealed MEMS mirror and method of manufacture
Giorgio Allegato, Monza (IT); Sonia Costantini, Missaglia (IT); Federico Vercesi, Milan (IT); and Roberto Carminati, Piancogno (IT)
Assigned to STMicroelectron S.r.l., Agrate Brianza (IT)
Filed by STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed on Jun. 6, 2023, as Appl. No. 18/206,363.
Application 18/206,363 is a division of application No. 16/591,854, filed on Oct. 3, 2019, granted, now 11,675,186, issued on Jun. 13, 2023.
Application 16/591,854 is a division of application No. 15/245,805, filed on Aug. 24, 2016, granted, now 10,473,920, issued on Nov. 12, 2019.
Prior Publication US 2023/0324678 A1, Oct. 12, 2023
Int. Cl. G02B 26/10 (2006.01); B81C 1/00 (2006.01); G02B 26/08 (2006.01)
CPC G02B 26/105 (2013.01) [B81C 1/00317 (2013.01); B81C 1/00523 (2013.01); G02B 26/0833 (2013.01); B81B 2201/042 (2013.01); B81C 2203/0109 (2013.01); B81C 2203/019 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of making a micro-electro mechanical system (MEMS) device, comprising:
forming a MEMS mirror stack on a handle layer;
applying a first bonding layer to the MEMS mirror stack;
disposing a substrate on the first bonding layer to mechanically anchor the MEMS mirror stack to the substrate and seal against ingress of environmental contaminants;
removing the handle layer;
applying a second bonding layer to the MEMS mirror stack; and
disposing a cap layer on the second bonding layer to mechanically anchor the cap layer to the MEMS mirror stack and seal against ingress of environmental contaminants;
wherein forming the MEMS mirror stack comprises:
disposing a silicon layer on the handle layer;
disposing a first insulating layer on the silicon layer;
etching portions of the first insulating layer;
depositing a first conductive layer on the first insulating layer and into the etched portions thereof, the first conductive layer deposited so as to have a width greater than a width of the substrate in at least one direction;
depositing a second insulating layer on the first conductive layer;
removing at least one portion of the second insulating layer to expose at least one portion of the first conductive layer exposed due to the first conductive layer having a width greater than the width of the substrate in the at least one direction; and
forming a conductive pad on the at least one exposed portion of the first conductive layer and extending away from the MEMS mirror stack opposite the cap layer.