US 12,078,728 B2
High dynamic range single photon avalanche detector array on silicon with circuitry for light detection and ranging
Clifford Alan King, Gloucester, MA (US); and Anders Ingvar Aberg, Staffanstorp (SE)
Assigned to Semiking LLC, Gloucester, MA (US)
Filed by SEMIKING LLC, Gloucester, MA (US)
Filed on Apr. 29, 2021, as Appl. No. 17/244,135.
Claims priority of provisional application 63/117,631, filed on Nov. 24, 2020.
Claims priority of provisional application 63/033,315, filed on Jun. 2, 2020.
Claims priority of provisional application 63/017,292, filed on Apr. 29, 2020.
Prior Publication US 2021/0341619 A1, Nov. 4, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G01S 17/894 (2020.01); G01S 7/4863 (2020.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01); H01L 31/107 (2006.01); H04N 5/33 (2023.01)
CPC G01S 17/894 (2020.01) [G01S 7/4863 (2013.01); H01L 27/14625 (2013.01); H01L 31/02027 (2013.01); H01L 31/107 (2013.01); H04N 5/33 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor array comprising:
a substrate; and
a plurality of pixels, each pixel comprising:
a single photon avalanche detector (SPAD), the SPAD having (1) a trench coupled to the substrate and having a lattice mismatch with the substrate and (2) a substantially defect-free region coupled to the trench and configured to generate an avalanche current when a photon is detected in the region, wherein the trench and the defect-free region form an electrode;
a quench device coupled to a respective SPAD and configured to quench the avalanche current; and
time measurement circuitry configured to measure a time-of-flight of the photon.