	US 12,078,654 B2
	Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips
Steven R. J. Brueck, Albuquerque, NM (US); Daniel Feezell, Albuquerque, NM (US); John Randall, Albuquerque, NM (US); Tito Busani, Albuquerque, NM (US); Joshua B. Ballard, Albuquerque, NM (US); Mahmoud Behzadirad, Albuquerque, NM (US); and Ashwin Krishnan Rishinaramangalam, Albuquerque, NM (US)
Filed by UNM RAINFOREST INNOVATIONS, Albuquerque, NM (US)
Filed on Apr. 22, 2021, as Appl. No. 17/237,697.
Application 17/237,697 is a division of application No. 16/095,011, granted, now 11,002,758, previously published as PCT/US2017/029180, filed on Apr. 24, 2017.
Claims priority of provisional application 62/327,294, filed on Apr. 25, 2016.
Prior Publication US 2021/0263069 A1, Aug. 26, 2021
Int. Cl. G01Q 60/16 (2010.01); B82B 3/00 (2006.01); G01Q 70/06 (2010.01); G01Q 70/10 (2010.01); G01Q 70/14 (2010.01); G01Q 80/00 (2010.01); G03F 7/00 (2006.01); G01Q 70/12 (2010.01)

CPC G01Q 60/16 (2013.01) [B82B 3/0004 (2013.01); G01Q 70/06 (2013.01); G01Q 70/10 (2013.01); G01Q 70/14 (2013.01); G01Q 80/00 (2013.01); G03F 7/0002 (2013.01); G01Q 70/12 (2013.01)]

12 Claims

1. A method of forming a composite tip for a scanning tunneling microscope (“STM”), comprising:

using a nanomanipulator to select a single crystal wide-band-gap semiconductor from an array of formed single crystal wide-band-gap semiconductors epitaxially grown selectively on a crystalline substrate, wherein the single crystal wide-band-gap semiconductor comprises a group III-N nanowire;

preparing an electrically conductive wire to provide a substantially flat end surface that is substantially perpendicular to the wire length direction;

transferring the single crystal wide-band-gap semiconductor from the growth substrate to the substantially flat end surface of the electrically conductive wire; and

affixing the single crystal wide-band-gap semiconductor to the substantially flat end surface of the electrically conductive wire to form the composite tip.