US 12,077,873 B2
Method for manufacturing nitride catalyst
Kuo-Hsin Lin, Hsinchu (TW); Li-Duan Tsai, Hsinchu (TW); Wen-Hsuan Chao, Zhunan Township (TW); Chiu-Ping Huang, Taoyuan (TW); Pin-Hsin Yang, Tainan (TW); Hsiao-Chun Huang, Taoyuan (TW); Jiunn-Nan Lin, Taoyuan (TW); and Yu-Ming Lin, Tainan (TW)
Assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu (TW)
Filed by INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu (TW)
Filed on Nov. 30, 2020, as Appl. No. 17/107,034.
Application 17/107,034 is a division of application No. 16/205,349, filed on Nov. 30, 2018, granted, now 10,900,133.
Prior Publication US 2021/0095383 A1, Apr. 1, 2021
Int. Cl. C25B 11/075 (2021.01); C01B 21/06 (2006.01); C25B 1/04 (2021.01); C25B 9/73 (2021.01); C25B 11/051 (2021.01); C25B 11/057 (2021.01); C30B 25/06 (2006.01); C30B 29/38 (2006.01)
CPC C25B 11/075 (2021.01) [C01B 21/0615 (2013.01); C01B 21/0622 (2013.01); C25B 1/04 (2013.01); C25B 9/73 (2021.01); C25B 11/051 (2021.01); C25B 11/057 (2021.01); C30B 25/06 (2013.01); C30B 29/38 (2013.01); C01P 2002/02 (2013.01); C01P 2002/76 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method for manufacturing nitride catalyst, comprising:
putting a Ru target and an M target into a nitrogen-containing atmosphere, wherein M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn;
providing powers to the Ru target and the M target, respectively; and
providing ions to bombard the Ru target and the M target, to sputtering deposit MxRuyN2 on a substrate, wherein 0<x<1.3, 0.7<y<2, and x+y=2,
wherein MxRuyN2 is a cubic crystal system or amorphous.