US 12,077,860 B2
Doped amorphous optical device films and deposition via incorporation of dopant atoms
Andrew Ceballos, Santa Clara, CA (US); Ludovic Godet, Sunnyvale, CA (US); Karl J. Armstrong, Sunnyvale, CA (US); and Rami Hourani, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 2, 2021, as Appl. No. 17/366,832.
Claims priority of provisional application 63/055,158, filed on Jul. 22, 2020.
Prior Publication US 2022/0025518 A1, Jan. 27, 2022
Int. Cl. G02B 1/10 (2015.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01)
CPC C23C 16/45563 (2013.01) [C23C 16/56 (2013.01); G02B 1/10 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for forming a film, comprising:
disposing an optical device substrate on a substrate support, the substrate support disposed in a chamber, the chamber comprising:
an optical device material target disposed in the chamber, the optical device material target comprising an optical device material, wherein the optical device material comprises one or both of:
a metal-containing material that comprises tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), indium oxide (In2O3), or hafnium oxide (HfO2); and
a semiconductor material that comprises silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, and transparent conducting oxides; and
a dielectric target disposed in the chamber, the dielectric target comprising a dopant material, wherein the dopant material comprises:
silicon (Si), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), hafnium (Hf), or oxides thereof, the dopant material and the optical device material are different; and
depositing an amorphous doped optical device film on the optical device substrate, comprising:
depositing the optical device material to form an optical device layer on a surface of the optical device substrate, the depositing the optical device material comprising providing a first power level of a DC power source to the optical device material target to deposit the optical device material at a first deposition rate; and
depositing the dopant material into the optical device layer to form the amorphous doped optical device film, the depositing the dopant material comprising providing a second power level of a RF power source to the dielectric target to deposit the dopant material at a second deposition rate, wherein the first deposition rate and the second deposition rate are different.