US 12,077,858 B2
Tungsten deposition
Pragna Nannapaneni, San Jose, CA (US); Novy Tjokro, Union City, CA (US); Sema Ermez, Santa Clara, CA (US); Ruopeng Deng, San Jose, CA (US); Tianhua Yu, Tracy, CA (US); Xiaolan Ba, Fremont, CA (US); and Sanjay Gopinath, Fremont, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/633,562
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Aug. 10, 2020, PCT No. PCT/US2020/070394
§ 371(c)(1), (2) Date Feb. 7, 2022,
PCT Pub. No. WO2021/030836, PCT Pub. Date Feb. 18, 2021.
Prior Publication US 2022/0364232 A1, Nov. 17, 2022
Int. Cl. C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01)
CPC C23C 16/45527 (2013.01) [C23C 16/4402 (2013.01); C23C 16/52 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method comprising:
providing a substrate including a feature in a chamber;
depositing a tungsten nucleation layer in the feature by performing one or more cycles of an atomic layer deposition (ALD) process, where each cycle comprises:
flowing one or more boron-containing reducing agent doses in the chamber,
flowing one or more silicon-containing reducing agent doses in the chamber, wherein the one or more boron-containing reducing agent doses and the one or more silicon-containing reducing agent doses are sequential reactant doses, and
after flowing the one or more boron-containing reducing agent doses and one or more silicon-containing reducing agent doses in the chamber, flowing one or more tungsten-containing precursor pulses in the chamber,
wherein during the deposition of the tungsten nucleation layer, the substrate temperature is low enough to suppress decomposition of the boron-containing reducing agent.