US 12,077,853 B2
Method of growing two-dimensional transition metal chalcogenide film and method of manufacturing device including the same
Hyangsook Lee, Suwon-si (KR); Hyoungsub Kim, Suwon-si (KR); Wonsik Ahn, Suwon-si (KR); and Eunha Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR); and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Suwen-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-do (KR)
Filed on Dec. 23, 2020, as Appl. No. 17/132,111.
Claims priority of application No. 10-2020-0073246 (KR), filed on Jun. 16, 2020.
Prior Publication US 2021/0388488 A1, Dec. 16, 2021
Int. Cl. C23C 16/30 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01)
CPC C23C 16/305 (2013.01) [C23C 16/0281 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); H01L 21/02568 (2013.01); H01L 21/28568 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of growing a two-dimensional transition metal chalcogenide (TMC) film, the method comprising:
placing a patterned metal layer on a surface of a substrate;
supplying a chalcogen precursor to a reaction chamber with the substrate;
supplying 0.1 μg to 2 μg of a transition metal precursor to the reaction chamber such that a ratio of the transition metal precursor and the chalcogen precursor is within a range about 8*10−6 to about 1.6*10−4; and
evacuating the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber after the supplying of the transition metal precursor,
wherein the supplying of the chalcogen precursor; the supplying of the transition metal precursor; and the evacuating of the chalcogen precursor, the transition metal precursor, and the by-products generated therefrom are sequentially, periodically, and repeatedly performed.