US 12,077,852 B2
Metal-doped boron films
Aykut Aydin, Sunnyvale, CA (US); Rui Cheng, San Jose, CA (US); and Karthik Janakiraman, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 26, 2021, as Appl. No. 17/240,395.
Prior Publication US 2022/0341034 A1, Oct. 27, 2022
Int. Cl. C23C 16/04 (2006.01); C23C 16/18 (2006.01); C23C 16/40 (2006.01); C23C 22/77 (2006.01); C23C 22/82 (2006.01)
CPC C23C 16/042 (2013.01) [C23C 16/18 (2013.01); C23C 16/402 (2013.01); C23C 22/77 (2013.01); C23C 22/82 (2013.01)] 19 Claims
OG exemplary drawing
 
16. A deposition method comprising:
delivering a boron-containing precursor to a processing region of a semiconductor processing chamber;
delivering a dopant-containing precursor with the boron-containing precursor, wherein the dopant-containing precursor includes a metal;
forming a plasma of all precursors within the processing region of the semiconductor processing chamber; and
depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber, wherein the doped-boron material includes less than or about 20 at. % of metal in the doped-boron material.