CPC C23C 14/35 (2013.01) [C23C 14/3407 (2013.01); C23C 14/3485 (2013.01); H01J 37/3405 (2013.01); H01J 37/3423 (2013.01); H01J 37/3458 (2013.01); H01L 21/2855 (2013.01)] | 20 Claims |
1. An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) method of sputtering a layer on a substrate using a magnetron, the method comprising:
positioning the magnetron in a vacuum with an anode, a cathode target, a magnet assembly, the substrate, and a feed gas;
applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse forming network (PFN), the PFN comprising at least one inductor and at least one capacitor;
adjusting at least one of an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor, thereby causing a resonance mode associated with the PFN, the PFN converting the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates an asymmetric AC discharge on the magnetron with pulse current densities in a range of about 0.1 to 20 A/cm2, the asymmetric AC signal operatively coupled to the cathode target, the asymmetric AC signal comprising a first negative voltage and a first positive voltage followed by a second negative voltage, the second negative voltage generating plasma for use during a subsequent negative voltage associated with the asymmetric AC signal, thereby increasing ionization of sputtered target material on the substrate during sputtering.
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