US 12,077,681 B2
CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
Ji Ho Lee, Suwon-si (KR); Young Gi Lee, Suwon-si (KR); Soo Yeon Sim, Suwon-si (KR); Hyun Woo Lee, Suwon-si (KR); Chang Suk Lee, Suwon-si (KR); and Jong Won Lee, Suwon-si (KR)
Assigned to SAMSUNG SDI CO., LTD., Yongin-si (KR)
Filed by SAMSUNG SDI CO., LTD., Yongin-si (KR)
Filed on Mar. 15, 2022, as Appl. No. 17/695,022.
Claims priority of application No. 10-2021-0035576 (KR), filed on Mar. 18, 2021.
Prior Publication US 2022/0298382 A1, Sep. 22, 2022
Int. Cl. C09G 1/04 (2006.01); B24B 1/00 (2006.01); B24B 37/04 (2012.01); C09G 1/00 (2006.01); C09G 1/02 (2006.01); C09G 1/06 (2006.01); C09K 3/14 (2006.01); C09K 13/06 (2006.01); H01L 21/306 (2006.01); B01J 23/745 (2006.01); B82Y 40/00 (2011.01); H01L 21/304 (2006.01)
CPC C09G 1/04 (2013.01) [B24B 1/00 (2013.01); B24B 37/044 (2013.01); C09G 1/00 (2013.01); C09G 1/02 (2013.01); C09G 1/06 (2013.01); C09K 3/1463 (2013.01); C09K 13/06 (2013.01); H01L 21/30625 (2013.01); B01J 23/745 (2013.01); B82Y 40/00 (2013.01); H01L 21/304 (2013.01)] 11 Claims
 
1. A CMP slurry composition for polishing a tungsten pattern wafer, the composition comprising:
a solvent;
an abrasive agent; and
a dendritic poly(amidoamine) containing a terminal functional group that has a pKa of about 6 or less,
wherein:
the terminal functional group that has a pKa of about 6 or less occupies about 10% to about 100% of total terminals in the dendritic poly(amidoamine),
the dendritic poly(amidoamine) is present in an amount of about 0.0001 wt % to about 0.1 wt %, based on a total weight of the CMP slurry composition, and
a generation number of the dendritic poly(amidoamine) is 1.5, 2.5, 3.5, 4.5, 5.5, 6.5, 7.5, 8.5, 9.5, or 10.5.