	US 12,077,680 B2
	Polishing composition, production method of the same, polishing method and a manufacturing method of a semiconductor substrate
Akiko Soumiya, Aichi (JP)
Assigned to FUJIMI INCORPORATED, Aichi (JP)
Filed by FUJIMI INCORPORATED, Aichi (JP)
Filed on Mar. 10, 2021, as Appl. No. 17/197,246.
Claims priority of application No. 2020-053111 (JP), filed on Mar. 24, 2020.
Prior Publication US 2021/0301174 A1, Sep. 30, 2021
Int. Cl. C09G 1/02 (2006.01); H01L 21/321 (2006.01)

CPC C09G 1/02 (2013.01) [H01L 21/3212 (2013.01)]

18 Claims

1. A polishing composition comprising silica particles, an oxidizing agent and a polishing accelerator,

wherein the polishing accelerator is a compound having an aromatic heterocyclic ring and an OH group or a group of a salt thereof directly bonded to the aromatic heterocyclic ring, wherein the aromatic heterocyclic ring is a monocyclic aromatic heterocyclic ring; and

the polishing composition has a pH exceeding 7 and is used for polishing an object to be polished containing titanium nitride.