US 12,077,633 B2
Chemical-resistant protective film-forming composition containing polymerization product of arylene compound having glycidyl group
Takafumi Endo, Toyama (JP); Tokio Nishita, Toyama (JP); and Ryuta Mizuochi, Toyama (JP)
Assigned to NISSAN CHEMICAL CORPORATION, Tokyo (JP)
Appl. No. 17/279,299
Filed by NISSAN CHEMICAL CORPORATION, Tokyo (JP)
PCT Filed Oct. 31, 2019, PCT No. PCT/JP2019/042708
§ 371(c)(1), (2) Date Mar. 24, 2021,
PCT Pub. No. WO2020/090950, PCT Pub. Date May 7, 2020.
Claims priority of application No. 2018-206860 (JP), filed on Nov. 1, 2018.
Prior Publication US 2021/0403635 A1, Dec. 30, 2021
Int. Cl. C08G 59/68 (2006.01); C08G 59/24 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01)
CPC C08G 59/245 (2013.01) [C08G 59/68 (2013.01); G03F 7/11 (2013.01); G03F 7/168 (2013.01); H01L 21/0337 (2013.01); H01L 21/3081 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01)] 20 Claims
 
1. A protective film-forming composition to a wet etching liquid for semiconductors, the protective film-forming composition comprising a solvent and a ring-opening polymerization product (C) from a reaction of a diepoxy compound (A) and a bi- or higher functional proton-generating compound (B),
wherein the ring-opening polymerization product (C) is represented by a unit structure of the following formula (A-1):

OG Complex Work Unit Chemistry
wherein, in formula (A-1):
T represents a divalent organic group derived from the bi- or higher functional proton-generating compound (B), and
Q represents a divalent organic group from the ring-opening polymerization of the diepoxy compound (A), and Q is represented by the following formula (A-2):

OG Complex Work Unit Chemistry
wherein, in formula (A-2), Ar represents a divalent arylene group, and n1 and n2 each independently represent an integer of 0 or 1.