US 12,077,431 B2
MEMS device having decreased contact resistance
Shibajyoti Ghosh Dastider, Roseville, CA (US); Mickael Renault, San Jose, CA (US); and Jacques Marcel Muyango, Rocklin, CA (US)
Assigned to Qorvo US, Inc., Greensboro, NC (US)
Appl. No. 17/608,822
Filed by Qorvo US, Inc., Greensboro, NC (US)
PCT Filed May 29, 2020, PCT No. PCT/US2020/035263
§ 371(c)(1), (2) Date Nov. 4, 2021,
PCT Pub. No. WO2020/243529, PCT Pub. Date Dec. 3, 2020.
Claims priority of provisional application 62/854,826, filed on May 30, 2019.
Prior Publication US 2022/0289565 A1, Sep. 15, 2022
Int. Cl. B81C 1/00 (2006.01); B81B 3/00 (2006.01)
CPC B81C 1/00325 (2013.01) [B81B 3/001 (2013.01); B81C 1/00523 (2013.01); B81B 2203/0315 (2013.01); B81C 2203/0145 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of manufacturing a MEMS device, comprising:
forming one or more electrical contact stacks comprising a contact surface of ruthenium, at least one of the one or more electrical contact stacks formed over at least one contact electrode;
placing a sacrificial material over the one or more electrical contact stacks;
forming a beam structure over the one or more electrical contact stacks so that the one or the more electrical contacts contact stacks are formed within a cavity that is filled with the sacrificial material;
removing sacrificial material to free the beam structure to move within a cavity, wherein at least one contact portion of the beam structure is capable of contacting the contact surface of the at least one contact electrode;
etching a portion of the contact surface of ruthenium within the cavity using an etchant comprising chlorine; and
sealing the cavity.