US 12,076,967 B2
Metal joint, metal joint production method, semiconductor device, and wave guide path
Takashi Ijima, Tokyo (JP); and Koji Yamazaki, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/264,873
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Sep. 25, 2018, PCT No. PCT/JP2018/035292
§ 371(c)(1), (2) Date Feb. 1, 2021,
PCT Pub. No. WO2020/065700, PCT Pub. Date Apr. 2, 2020.
Prior Publication US 2021/0305194 A1, Sep. 30, 2021
Int. Cl. B32B 37/06 (2006.01); B23K 103/12 (2006.01); H01L 23/00 (2006.01)
CPC B32B 37/06 (2013.01) [H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); B23K 2103/12 (2018.08); B32B 2311/08 (2013.01); B32B 2311/12 (2013.01); B32B 2311/20 (2013.01); H01L 2224/2908 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/32503 (2013.01); H01L 2224/83801 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A metal joint, comprising:
a Ag—Cu—Zn layer; and
two Cu—Zn layers, each one of the Cu—Zn layers being joined to a different surface of the Ag—Cu—Zn layer,
wherein the Ag—Cu—Zn layer has a composition in which a Cu component is from 1 atm % or more and 10 atm % or less, a Zn component is from 1 atm % or more and 40 atm % or less, and the balance is a Ag component with respect to the total 100 atm %, and
wherein each one of the Cu—Zn layers has a composition in which a Zn component is from 10 atm % or more and 40 atm % or less and the balance is a Cu component with respect to the total 100 atm %.