US 12,076,831 B2
Chemical mechanical polishing apparatus and method
Yu-Chen Wei, New Taipei (TW); Jheng-Si Su, Zhubei (TW); Shih-Ho Lin, Jhubei (TW); Jen-Chieh Lai, Tainan (TW); and Chun-Chieh Chan, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 28, 2023, as Appl. No. 18/308,878.
Application 17/711,724 is a division of application No. 15/904,774, filed on Feb. 26, 2018, granted, now 11,292,101, issued on Apr. 5, 2022.
Application 18/308,878 is a continuation of application No. 17/711,724, filed on Apr. 1, 2022, granted, now 11,673,223.
Claims priority of provisional application 62/589,802, filed on Nov. 22, 2017.
Prior Publication US 2023/0264317 A1, Aug. 24, 2023
Int. Cl. B24B 37/005 (2012.01); B24B 37/04 (2012.01); B24B 37/20 (2012.01); B24B 37/32 (2012.01); B24B 49/10 (2006.01); B24B 49/16 (2006.01); B24B 49/18 (2006.01); B24B 53/00 (2006.01); B24B 53/007 (2006.01); B24B 53/017 (2012.01); H01L 21/321 (2006.01)
CPC B24B 37/20 (2013.01) [B24B 37/005 (2013.01); B24B 37/04 (2013.01); B24B 37/32 (2013.01); B24B 49/10 (2013.01); B24B 49/16 (2013.01); B24B 49/18 (2013.01); B24B 53/001 (2013.01); B24B 53/017 (2013.01); H01L 21/3212 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A chemical mechanical polishing (CMP) apparatus, comprising:
a polishing pad having a polishing surface;
a polishing head configured to hold a wafer in contact with the polishing surface during a polishing process, wherein the polishing head comprises:
a retaining ring arranged along a periphery of the polishing head and configured to retain the wafer;
at least one fluid channel provided inside the polishing head, wherein the retaining ring comprises a bottom surface facing the polishing surface and a plurality of holes in fluid communication with the bottom surface and the at least one fluid channel; and
a vacuum pump fluidly coupled to the at least one fluid channel; and
a washing solution supply system fluidly connected to the at least one fluid channel and configured to supply a washing solution to clean the at least one fluid channel.