US 12,076,830 B2
Polishing method and polishing apparatus
Masashi Kabasawa, Tokyo (JP)
Assigned to EBARA CORPORATION, Tokyo (JP)
Filed by EBARA CORPORATION, Tokyo (JP)
Filed on Mar. 22, 2023, as Appl. No. 18/187,786.
Application 18/187,786 is a division of application No. 16/894,173, filed on Jun. 5, 2020, granted, now 11,642,751.
Claims priority of application No. 2019-108387 (JP), filed on Jun. 11, 2019; and application No. 2020-093103 (JP), filed on May 28, 2020.
Prior Publication US 2023/0219187 A1, Jul. 13, 2023
Int. Cl. B24B 37/015 (2012.01); B24B 37/013 (2012.01); B24B 37/04 (2012.01)
CPC B24B 37/015 (2013.01) [B24B 37/013 (2013.01); B24B 37/04 (2013.01); B24B 37/042 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A polishing apparatus comprising:
a polishing table for supporting a polishing pad;
a polishing head configured to polish a substrate by pressing the substrate against a polishing surface of the polishing pad;
a heat exchanger having a heating flow passage and a cooling flow passage therein, the heat exchanger being arranged above the polishing table;
a pad-temperature measuring device configured to measure a temperature of the polishing surface;
a fluid supply system having a heating-fluid supply pipe and a cooling-fluid supply pipe coupled to the heating flow passage and the cooling flow passage, respectively;
a film-thickness sensor attached to the polishing table; and
an operation controller having a memory and a processing device, the memory storing a program therein, the processing device being configured to perform an arithmetic operation according to an instruction contained in the program,
the operation controller being configured to
calculate a target polishing rate required for an actual polishing time to coincide with a target polishing time, the actual polishing time being a time duration from start of polishing the substrate until a film thickness of the substrate reaches a target thickness, and
operate the fluid supply system during polishing of the substrate to adjust a temperature of the polishing surface by the heat exchanger such that a current polishing rate of the substrate is maintained at the target polishing rate.