US 12,076,763 B2
Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor
Yujia Zhai, Fremont, CA (US); Lai Zhao, Campbell, CA (US); Xiangxin Rui, Campbell, CA (US); Dong-Kil Yim, Pleasanton, CA (US); Tae Kyung Won, San Jose, CA (US); and Soo Young Choi, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 13, 2018, as Appl. No. 16/007,876.
Application 16/007,876 is a continuation in part of application No. 15/700,671, filed on Sep. 11, 2017, abandoned.
Application 16/007,876 is a continuation in part of application No. 15/613,862, filed on Jun. 5, 2017, abandoned.
Prior Publication US 2018/0345330 A1, Dec. 6, 2018
Int. Cl. B08B 7/00 (2006.01); B08B 9/00 (2006.01); C23C 16/44 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/687 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 49/02 (2006.01)
CPC B08B 7/0035 (2013.01) [B08B 9/00 (2013.01); C23C 16/4405 (2013.01); H01J 37/32082 (2013.01); H01L 27/1255 (2013.01); H01L 29/4908 (2013.01); H01J 2237/335 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/68742 (2013.01); H01L 28/40 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for cleaning a processing chamber, comprising:
introducing a reactive species into a process volume of the processing chamber having a residual high-k dielectric material formed over one or more interior surfaces that define the process volume of the processing chamber, wherein the one or more interior surfaces comprise a stainless steel surface of at least one sidewall and at least one aluminum surface coated with a protective coating, wherein the protective coating comprises an alumina material disposed on the aluminum surface and a yttrium-containing material disposed on the alumina material, and wherein the at least one aluminum surface comprises a substrate-receiving surface of a substrate support assembly;
reacting the residual high-k dielectric material with the reactive species to form a volatile product; and
removing the volatile product from the processing chamber,
wherein a removal rate of the residual high-k dielectric material is greater than a removal rate of the yttrium-containing material coated on the at least one aluminum surface,
wherein the reactive species is formed from a halogen-containing gas mixture, and
wherein the residual high-k dielectric material is selected from zirconium dioxide (ZrO2) and hafnium dioxide (HfO2).