CPC B08B 7/0035 (2013.01) [B08B 9/00 (2013.01); C23C 16/4405 (2013.01); H01J 37/32082 (2013.01); H01L 27/1255 (2013.01); H01L 29/4908 (2013.01); H01J 2237/335 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/68742 (2013.01); H01L 28/40 (2013.01)] | 20 Claims |
1. A method for cleaning a processing chamber, comprising:
introducing a reactive species into a process volume of the processing chamber having a residual high-k dielectric material formed over one or more interior surfaces that define the process volume of the processing chamber, wherein the one or more interior surfaces comprise a stainless steel surface of at least one sidewall and at least one aluminum surface coated with a protective coating, wherein the protective coating comprises an alumina material disposed on the aluminum surface and a yttrium-containing material disposed on the alumina material, and wherein the at least one aluminum surface comprises a substrate-receiving surface of a substrate support assembly;
reacting the residual high-k dielectric material with the reactive species to form a volatile product; and
removing the volatile product from the processing chamber,
wherein a removal rate of the residual high-k dielectric material is greater than a removal rate of the yttrium-containing material coated on the at least one aluminum surface,
wherein the reactive species is formed from a halogen-containing gas mixture, and
wherein the residual high-k dielectric material is selected from zirconium dioxide (ZrO2) and hafnium dioxide (HfO2).
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