US 12,408,570 B2
Phase change random access memory device
Chun-Hsu Yen, Hsinchu (TW); Yu-Chuan Hsu, Hsinchu (TW); and Chen-Hui Yang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 11, 2024, as Appl. No. 18/770,547.
Application 16/688,976 is a division of application No. 15/904,064, filed on Feb. 23, 2018, granted, now 10,510,954.
Application 18/770,547 is a continuation of application No. 18/231,750, filed on Aug. 8, 2023, granted, now 12,089,513.
Application 18/231,750 is a continuation of application No. 17/571,260, filed on Jan. 7, 2022, granted, now 11,765,988.
Application 17/571,260 is a continuation of application No. 16/688,976, filed on Nov. 19, 2019, granted, now 11,233,197.
Claims priority of provisional application 62/591,318, filed on Nov. 28, 2017.
Prior Publication US 2024/0365690 A1, Oct. 31, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01); G11C 13/00 (2006.01)
CPC H10N 70/8413 (2023.02) [H10B 63/30 (2023.02); H10N 70/011 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/8265 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02); H10N 70/884 (2023.02); G11C 13/0004 (2013.01); H10B 63/84 (2023.02); H10N 70/041 (2023.02); H10N 70/066 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/881 (2023.02); H10N 70/8833 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a first conductive column structure extending through a first dielectric layer;
a first phase change material layer formed over the first dielectric layer;
a second dielectric layer disposed above the first phase change material layer; and
a second conductive column structure extending through the second dielectric layer, wherein the second conductive column structure comprises a shell portion wrapping a core structure filled with a dielectric material and an end portion that is coupled to a first end of the shell portion.